 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DSS4540X LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features * * * * * * Complementary PNP Type Available (DSS5540X) Ultra Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Mechanical Data * * * * * * * Case: SOT89-3L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish -- Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) NEW PRODUCT COLLECTOR 2,4 3E C4 2C 1B Pin Out Configuration 1 BASE 3 EMITTER Device Schematic Top View Maximum Ratings @TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC ICRM ICM IB IBM Value 40 40 6 4 5 10 1 2 Unit V V V A A A A A Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Repetitive Collector Current (Note 3) Peak Pulse Collector Current Continuous Base Current Peak Pulse Base Current Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25C Power Dissipation (Note 5) @ TA = 25C Thermal Resistance, Junction to Ambient Air (Note 5) @ TA = 25C Operating and Storage Temperature Range Notes: 1. 2. 3. 4. 5. Symbol PD RJA PD RJA TJ, TSTG Value 0.9 139 2 62.5 -55 to +150 Unit W C/W W C/W C No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Operated under pulsed conditions: pulse width 10ms; duty cycle 0.2. Device mounted on FR-4 PCB with minimum recommended pad layout. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. DSS4540X Document number: DS31592 Rev. 2 - 2 1 of 4 www.diodes.com December 2008 (c) Diodes Incorporated DSS4540X Electrical Characteristics @TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO Min 40 40 6 300 300 250 100 70 Typ 80 160 185 37 135 60 75 670 570 100 Max 100 50 100 100 90 120 150 290 355 71 1.1 1.2 1.1 75 Unit V V V nA A nA nA Test Conditions IC = 100A IC = 10mA IE = 100A VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 150C VCE = 30V, VBE = 0V VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A VCE = 2V, IC = 2A VCE = 2V, IC = 5A IC = 0.5A, IB = 5mA IC = 1A, IB = 10mA IC = 2A, IB = 200mA IC = 4A, IB = 200mA IC = 5A, IB = 500mA IC = 5A, IB = 500mA IC = 4A, IB = 200mA IC = 5A, IB = 500mA VCE = 2V, IC = 2A VCE = 10V, IC = 0.1A, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz VCC = 10V, IC = 2A, IB1 = 40mA VCC = 10V, IC = 2A, IB1 = IB2 = 40mA Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage NEW PRODUCT Collector-Base Cutoff Current Collector-Emitter Cut-Off Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 6) DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(SAT) mV Equivalent On-Resistance Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SMALL SIGNAL CHARACTERISTICS Transition Frequency Collector Capacitance SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Notes: RCE(SAT) VBE(SAT) VBE(ON) fT Cc ton td tr toff ts tf m V V MHz pF ns ns ns ns ns ns 6. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 2.0 4.0 3.5 PD, POWER DISSIPATION (W) 1.6 IC, COLLECTOR CURRENT (A) IB = 10mA 3.0 IB = 8mA 1.2 Note 5 2.5 IB = 6mA 2.0 1.5 1.0 IB = 2mA IB = 4mA 0.8 0.4 Note 4 0.5 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature 0 0 1 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 5 DSS4540X Document number: DS31592 Rev. 2 - 2 2 of 4 www.diodes.com December 2008 (c) Diodes Incorporated DSS4540X 800 700 TA = 150C VCE = 2V 1 IC/IB = 10 hFE, DC CURRENT GAIN 600 500 400 300 200 100 0 0.001 TA = -55C T A = 85C VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.1 T A = 150C TA = 85C TA = 25C NEW PRODUCT T A = 25C 0.01 TA = -55C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 0.001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1.2 VCE = 2V 1.2 IC/IB = 10 1.0 1.0 0.8 T A = -55C 0.8 TA = -55C 0.6 TA = 25C 0.6 TA = 25C 0.4 TA = 85C 0.4 TA = 85C T A = 150C 0.2 TA = 150C 0.2 0 0.001 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 1,000 f = 1MHz 1,000 fT, GAIN-BANDWIDTH PRODUCT (MHz) CAPACITANCE (pF) 100 100 Cibo 10 Cobo 10 VCE = 10V f = 100MHz 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 1 0 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current DSS4540X Document number: DS31592 Rev. 2 - 2 3 of 4 www.diodes.com December 2008 (c) Diodes Incorporated DSS4540X Ordering Information Part Number DSS4540X-13 Notes: (Note 7) Case SOT89-3L Packaging 2500/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information ZNS54 = Product Type Marking Code = Manufacturer's Code Marking YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code 01 - 52 YWW ZNS54 Package Outline Dimensions D1 R0 .2 00 C E H B B1 8 (4 X ) L e A SOT89-3L Dim Min Max Typ A 1.40 1.60 1.50 B 0.45 0.55 0.50 B1 0.37 0.47 0.42 C 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.50 1.70 1.60 E 2.40 2.60 2.50 e -- -- 1.50 H 3.95 4.25 4.10 L 0.90 1.20 1.05 All Dimensions in mm D Suggested Pad Layout X1 Y1 X3 Y3 X2 Y2 Dimensions Value (in mm) X1 1.7 X2 0.9 X3 0.4 Y1 2.7 Y2 1.3 Y3 1.9 C 3.0 C IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DSS4540X Document number: DS31592 Rev. 2 - 2 4 of 4 www.diodes.com December 2008 (c) Diodes Incorporated |
Price & Availability of DSS4540X-13
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |